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SGG150-12CS2IGBT
Product Detailed
Related Categories:Other Electronic Components
SGG150-12CS2 IGBT
IGBT modules
SPT: Soft-punch-through technology
VCE(SAT) with positive temperature coefficient
SGG150-12CS2IGBT
IGBT modules
Parameter name
symbol
unit
values
conditions
IGBT
Collector-emitter voltage
VCES
V
1200
DC-collector current
IC
A
200 (150)
TC=25(80)
Repetitive peak current
ICRM
A
400 (300)
TC=25(80), tp=1ms
Gate-emitter peak voltage
VGES
V
±20
Operation temperature
Top
-40~+125
Storage temperature
Tstg
-40~+125
Insulation test voltage
VISOL
V
2500
RMS, 1min, 50Hz
Inverse diode
DC-forward current
IF
A
200 (150)
TC=25(80)
Repetitive peak forward voltage
IFRM
A
400 (300)
TC=25(80), tp=1ms
Forward surge current
IFSM
A
1400
tp=10ms, sin, Tj=125
SGG150-12CS2IGBT
